DiodesZetex DMPH4029 Type P-Channel MOSFET, 8 A, 40 V Enhancement, 8-Pin PowerDI3333 DMPH4029LFGQ-7
- RS庫存編號:
- 206-0137
- 製造零件編號:
- DMPH4029LFGQ-7
- 製造商:
- DiodesZetex
可享批量折扣
查看批量定價選項小計（25 件, 每袋25個）*
HK$140.60
訂單超過 HK$250.00 免費送貨
有庫存
- 275 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 475 | HK$5.624 | HK$140.60 |
| 500 - 975 | HK$5.48 | HK$137.00 |
| 1000 + | HK$5.40 | HK$135.00 |
* 參考價格
- RS庫存編號:
- 206-0137
- 製造零件編號:
- DMPH4029LFGQ-7
- 製造商:
- DiodesZetex
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | DMPH4029 | |
| Package Type | PowerDI3333 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 52nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | -1V | |
| Maximum Power Dissipation Pd | 1.8W | |
| Maximum Operating Temperature | 150°C | |
| Length | 9.4mm | |
| Height | 2.4mm | |
| Standards/Approvals | No | |
| Width | 6.4mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 DiodesZetex | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series DMPH4029 | ||
Package Type PowerDI3333 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 52nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf -1V | ||
Maximum Power Dissipation Pd 1.8W | ||
Maximum Operating Temperature 150°C | ||
Length 9.4mm | ||
Height 2.4mm | ||
Standards/Approvals No | ||
Width 6.4mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The DiodesZetex 40V,8 pin P channel enhancement mode MOSFET is designed to meet the stringent requirement of automotive application. It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in power management function and analogue switch. Its gate-source voltage is 20V with 1.3 W thermal power dissipation..
Low on-resistance
Fast switching speed
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