DiodesZetex DMT616 N-Channel MOSFET, 10 A, 60 V Enhancement, 8-Pin SO-8 DMT616MLSS-13
- RS庫存編號:
- 206-0156
- 製造零件編號:
- DMT616MLSS-13
- 製造商:
- DiodesZetex
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 卷，共 2500 件）*
HK$3,912.50
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單位 | 每單位 | 每卷* |
|---|---|---|
| 2500 - 2500 | HK$1.565 | HK$3,912.50 |
| 5000 - 7500 | HK$1.533 | HK$3,832.50 |
| 10000 + | HK$1.487 | HK$3,717.50 |
* 參考價格
- RS庫存編號:
- 206-0156
- 製造零件編號:
- DMT616MLSS-13
- 製造商:
- DiodesZetex
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | DMT616 | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 21mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 13.6nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 1.39W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 4.85mm | |
| Height | 1.4mm | |
| Length | 5.9mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 DiodesZetex | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series DMT616 | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 21mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 13.6nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 1.39W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 4.85mm | ||
Height 1.4mm | ||
Length 5.9mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The DiodesZetex 60V,8 pin N- channel enhancement mode MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high-efficiency power management application. Its gate-source voltage is 20V with 1.39 W thermal power dissipation.
Fast switching speed
Low input capacitance
相关链接
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