Texas Instruments NexFET N-Channel MOSFET, 12 A, 60 V Enhancement, 8-Pin VSONP
- RS庫存編號:
- 208-8481
- 製造零件編號:
- CSD18543Q3A
- 製造商:
- Texas Instruments
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 卷，共 2500 件）*
HK$8,312.50
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 2,500 件從 2027年2月25日 起裝運發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 2500 - 2500 | HK$3.325 | HK$8,312.50 |
| 5000 - 7500 | HK$3.258 | HK$8,145.00 |
| 10000 + | HK$3.193 | HK$7,982.50 |
* 參考價格
- RS庫存編號:
- 208-8481
- 製造零件編號:
- CSD18543Q3A
- 製造商:
- Texas Instruments
規格
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Texas Instruments | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | VSONP | |
| Series | NexFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.2mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 66W | |
| Typical Gate Charge Qg @ Vgs | 11.1nC | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.25mm | |
| Width | 3.1mm | |
| Standards/Approvals | No | |
| Height | 0.9mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Texas Instruments | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type VSONP | ||
Series NexFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.2mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 66W | ||
Typical Gate Charge Qg @ Vgs 11.1nC | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 3.25mm | ||
Width 3.1mm | ||
Standards/Approvals No | ||
Height 0.9mm | ||
Automotive Standard No | ||
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相关链接
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