製造零件編號

Vishay E Type N-Channel MOSFET, 17.4 A, 800 V Enhancement, 3-Pin TO-263

RS庫存編號:: 210-4976
製造零件編號:: SIHB21N80AE-GE3
製造商:: Vishay

Vishay E Type N-Channel MOSFET, 17.4 A, 800 V Enhancement, 3-Pin TO-263

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 管，共 50 件）*

HK$826.70

訂單超過 HK$250.00 免費送貨

最後的 RS 庫存

最終 2,750 個，準備發貨

單位	每單位	每管*
50 - 50	HK$16.534	HK$826.70
100 - 150	HK$16.172	HK$808.60
200 +	HK$15.816	HK$790.80

* 參考價格

RS庫存編號:: 210-4976
製造零件編號:: SIHB21N80AE-GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	17.4A
	Maximum Drain Source Voltage Vds	800V
	Series	E
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	205mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	48nC
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	179W
	Maximum Operating Temperature	150°C
	Length	14.61mm
	Height	4.06mm
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 17.4A
	Maximum Drain Source Voltage Vds 800V
	Series E
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 205mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 48nC
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 179W
	Maximum Operating Temperature 150°C
	Length 14.61mm
	Height 4.06mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - SIHB21N80AE-GE3

The Vishay E Series Power MOSFET has D2PAK (TO-263) package type with 17.4 A drain current.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

Reduced switching and conduction losses

Avalanche energy rated (UIS)

Vishay E Type N-Channel MOSFET, 17.4 A, 800 V Enhancement, 3-Pin TO-263

訂單超過 HK$250.00 免費送貨

批量購買價格選項

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