Vishay SIHB21N80AE N channel-Channel MOSFET, 17.4 A, 800 V Enhancement, 3-Pin TO-263 SIHB21N80AE-T5-GE3

N
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  • 2026年10月09日 發貨
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RS庫存編號:
735-129
製造零件編號:
SIHB21N80AE-T5-GE3
製造商:
Vishay
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品牌

Vishay

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

17.4A

Maximum Drain Source Voltage Vds

800V

Series

SIHB21N80AE

Package Type

TO-263

Mount Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance Rds

0.205Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

179W

Maximum Gate Source Voltage Vgs

30V

Typical Gate Charge Qg @ Vgs

48nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

0.42mm

Width

0.355mm

Automotive Standard

No

COO (Country of Origin):
IL
The Vishay Power MOSFET offers high efficiency and robust performance in power supplies, suitable for demanding applications in server and telecom environments. It is designed to optimise energy management and minimise losses.

Low effective capacitance contributing to Faster response times

Single configuration streamlines design and integration

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