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Vishay N-Channel MOSFET, 430 A, 20 V Enhancement, 8-Pin SO-8 SIR178DP-T1-RE3

Name: Vishay N-Channel MOSFET, 430 A, 20 V Enhancement, 8-Pin SO-8 SIR178DP-T1-RE3
Brand: Vishay
SKU: 210-4998
Availability: InStock

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小計（1 卷，共 3000 件）*

HK$27,978.00

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單位	每單位	每卷*
3000 - 12000	HK$9.326	HK$27,978.00
15000 +	HK$9.139	HK$27,417.00

* 參考價格

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	430A
	Maximum Drain Source Voltage Vds	20V
	Package Type	SO-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.31mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	204nC
	Maximum Power Dissipation Pd	104W
	Maximum Gate Source Voltage Vgs	12V
	Maximum Operating Temperature	150°C
	Length	6.25mm
	Height	1.12mm
	Standards/Approvals	No
	Width	5.26mm
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 430A
	Maximum Drain Source Voltage Vds 20V
	Package Type SO-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.31mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 204nC
	Maximum Power Dissipation Pd 104W
	Maximum Gate Source Voltage Vgs 12V
	Maximum Operating Temperature 150°C
	Length 6.25mm
	Height 1.12mm
	Standards/Approvals No
	Width 5.26mm
	Automotive Standard No

The Vishay N-Channel 20 V (D-S) MOSFET has PowerPAK SO-8 package type with 430 A drain current.

TrenchFET Gen IV power MOSFET

Very low RDS x Qg figure-of-merit (FOM)

Leadership RDS(ON) minimizes power loss from conduction

2.5 V ratings and operation at low voltage gate drive

100 % Rg and UIS tested

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