Vishay SiR826LDP Type N-Channel MOSFET, 86 A, 80 V Enhancement, 8-Pin SO-8

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RS庫存編號:
210-5004
製造零件編號:
SiR826LDP-T1-RE3
製造商:
Vishay
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品牌

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

86A

Maximum Drain Source Voltage Vds

80V

Package Type

SO-8

Series

SiR826LDP

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

4.15mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

90nC

Maximum Power Dissipation Pd

83W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

1.12mm

Length

6.25mm

Automotive Standard

No

The Vishay N-Channel 80 V (D-S) MOSFET has PowerPAK SO-8 package type with 86 A drain current.

TrenchFET Gen IV power MOSFET

Very low RDS - Qg figure-of-merit (FOM)

Tuned for the lowest RDS - Qoss FOM

100 % Rg and UIS tested

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