Vishay SiSS32ADN Type N-Channel MOSFET, 63 A, 80 V Enhancement, 8-Pin PowerPAK 1212 SiSS32ADN-T1-GE3

此圖片僅供參考,請參閲產品詳細資訊及規格

可享批量折扣

小計(1 包,共 10 件)*

HK$76.80

Add to Basket
選擇或輸入數量
有庫存
  • 11,830 件準備從其他地點送貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位
每單位
每包*
10 - 740HK$7.68HK$76.80
750 - 1490HK$7.49HK$74.90
1500 +HK$7.37HK$73.70

* 參考價格

包裝方式:
RS庫存編號:
210-5014
製造零件編號:
SiSS32ADN-T1-GE3
製造商:
Vishay
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

63A

Maximum Drain Source Voltage Vds

80V

Package Type

PowerPAK 1212

Series

SiSS32ADN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

6.1mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

24nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

65.7W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

3.4 mm

Height

0.83mm

Length

3.4mm

Automotive Standard

No

The Vishay N-Channel 80 V (D-S) MOSFET has PowerPAK 1212-8S package type with 63 A drain current.

TrenchFET Gen IV power MOSFET

Very low RDS - Qg figure-of-merit (FOM)

Tuned for the lowest RDS - Qoss FOM

100 % Rg and UIS tested

相关链接