Vishay SQJQ148E N-Channel MOSFET, 375 A, 40 V Enhancement, 4-Pin PowerPAK (8x8L) SQJQ148E-T1_GE3
- RS庫存編號:
- 210-5059
- 製造零件編號:
- SQJQ148E-T1_GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 卷，共 2000 件）*
HK$21,404.00
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單位 | 每單位 | 每卷* |
|---|---|---|
| 2000 - 2000 | HK$10.702 | HK$21,404.00 |
| 4000 - 6000 | HK$10.488 | HK$20,976.00 |
| 8000 + | HK$10.278 | HK$20,556.00 |
* 參考價格
- RS庫存編號:
- 210-5059
- 製造零件編號:
- SQJQ148E-T1_GE3
- 製造商:
- Vishay
規格
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法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 375A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | SQJQ148E | |
| Package Type | PowerPAK (8x8L) | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 1.3mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 325W | |
| Typical Gate Charge Qg @ Vgs | 69nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 175°C | |
| Length | 8mm | |
| Standards/Approvals | No | |
| Height | 1.7mm | |
| Width | 8.1mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 375A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series SQJQ148E | ||
Package Type PowerPAK (8x8L) | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 1.3mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 325W | ||
Typical Gate Charge Qg @ Vgs 69nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 175°C | ||
Length 8mm | ||
Standards/Approvals No | ||
Height 1.7mm | ||
Width 8.1mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay Automotive N-Channel 40 V (D-S) 175 °C MOSFET has PowerPAK 8 x 8L package type with 375 A drain current.
TrenchFET Gen IV power MOSFET
AEC-Q101 qualified
100 % Rg and UIS tested
Thin 1.6 mm package
Very low thermal resistance
相关链接
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