STMicroelectronics SCT1000N170 N-Channel MOSFET, 7 A, 1.7 kV Enhancement, 3-Pin Hip-247 SCT1000N170
- RS庫存編號:
- 212-2091
- 製造零件編號:
- SCT1000N170
- 製造商:
- STMicroelectronics
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 管，共 30 件）*
HK$4,083.00
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單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 120 | HK$136.10 | HK$4,083.00 |
| 150 + | HK$132.017 | HK$3,960.51 |
* 參考價格
- RS庫存編號:
- 212-2091
- 製造零件編號:
- SCT1000N170
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 1.7kV | |
| Package Type | Hip-247 | |
| Series | SCT1000N170 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.66Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 96W | |
| Typical Gate Charge Qg @ Vgs | 13.3nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Forward Voltage Vf | 4.5V | |
| Maximum Operating Temperature | 200°C | |
| Length | 15.75mm | |
| Height | 5.15mm | |
| Standards/Approvals | No | |
| Width | 20.15mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 1.7kV | ||
Package Type Hip-247 | ||
Series SCT1000N170 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.66Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 96W | ||
Typical Gate Charge Qg @ Vgs 13.3nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 22V | ||
Forward Voltage Vf 4.5V | ||
Maximum Operating Temperature 200°C | ||
Length 15.75mm | ||
Height 5.15mm | ||
Standards/Approvals No | ||
Width 20.15mm | ||
Automotive Standard No | ||
SiC MOSFET
The STMicroelectronics silicon carbide power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247 package, allows designers to use an industry standard outline with significantly improved thermal capability.
High speed switching performance
Very fast and robust intrinsic body diode
Low capacitances
相关链接
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