STMicroelectronics SCTL35N65G2V N-Channel MOSFET, 40 A, 650 V Enhancement, 4-Pin PowerFLAT SCTL35N65G2V
- RS庫存編號:
- 213-3941
- 製造零件編號:
- SCTL35N65G2V
- 製造商:
- STMicroelectronics
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 卷，共 3000 件）*
HK$551,322.00
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2027年10月05日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 12000 | HK$183.774 | HK$551,322.00 |
| 15000 + | HK$180.099 | HK$540,297.00 |
* 參考價格
- RS庫存編號:
- 213-3941
- 製造零件編號:
- SCTL35N65G2V
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PowerFLAT | |
| Series | SCTL35N65G2V | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 67mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 417W | |
| Typical Gate Charge Qg @ Vgs | 73nC | |
| Forward Voltage Vf | 3.3V | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Maximum Operating Temperature | 175°C | |
| Height | 950μm | |
| Length | 8.1mm | |
| Width | 8.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PowerFLAT | ||
Series SCTL35N65G2V | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 67mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 417W | ||
Typical Gate Charge Qg @ Vgs 73nC | ||
Forward Voltage Vf 3.3V | ||
Maximum Gate Source Voltage Vgs 22V | ||
Maximum Operating Temperature 175°C | ||
Height 950μm | ||
Length 8.1mm | ||
Width 8.1mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The STMicroelectronics SCTL35N65G2V silicon carbide power MOSFET device has been developed using advanced and innovative 2nd generation SiC MOSFET technology, features remarkably low on-resistance per unit area and very good switching performance.
Very fast and robust intrinsic body diode
Low capacitance
Source sensing pin for increased efficiency
相关链接
- STMicroelectronics SCTL35N65G2V N-Channel MOSFET 650 V Enhancement, 4-Pin PowerFLAT SCTL35N65G2V
- STMicroelectronics N-Channel STL N-Channel MOSFET 40 V Enhancement, 8-Pin PowerFLAT STL170N4LF8
- STMicroelectronics N-Channel STL160 N-Channel MOSFET 60 V Enhancement, 8-Pin PowerFLAT STL160N6LF7
- STMicroelectronics ST8L65 N-Channel Single MOSFETs 650 V Enhancement, 5-Pin PowerFLAT ST8L65N044M9
- STMicroelectronics ST8L65N0 N-Channel Power MOSFET 650 V N, 5-Pin PowerFlat HV ST8L65N065DM9
- STMicroelectronics ST8L65N0 N-Channel Power MOSFET 650 V N, 5-Pin PowerFlat HV ST8L65N050DM9
- STMicroelectronics N-Channel MOSFET 600 V Enhancement, 5-Pin PowerFLAT
- STMicroelectronics N-Channel MOSFET 100 V Enhancement, 8-Pin PowerFLAT STL120N10F8