Infineon OptiMOS 3 N-Channel MOSFET, 70 A, 40 V N, 3-Pin TO-220 IPA041N04NGXKSA1
- RS庫存編號:
- 214-4349
- 製造零件編號:
- IPA041N04NGXKSA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 管，共 50 件）*
HK$388.60
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單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 50 | HK$7.772 | HK$388.60 |
| 100 - 150 | HK$7.536 | HK$376.80 |
| 200 + | HK$7.312 | HK$365.60 |
* 參考價格
- RS庫存編號:
- 214-4349
- 製造零件編號:
- IPA041N04NGXKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 70A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | OptiMOS 3 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.1mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Maximum Power Dissipation Pd | 35W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.68mm | |
| Height | 4.85mm | |
| Standards/Approvals | No | |
| Width | 16.15mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 70A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series OptiMOS 3 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.1mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Maximum Power Dissipation Pd 35W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Length 10.68mm | ||
Height 4.85mm | ||
Standards/Approvals No | ||
Width 16.15mm | ||
Automotive Standard No | ||
This Infineon OptiMOS 3 MOSFET features not only the industry’s lowest R DS(on) but also a perfect switching behaviour for fast switching applications. 15% lower R DS(on) and 31% lower figure of merit (R DS(on) x Q g) compared to alternative devices has been realized by advanced thin wafer technology.
It is Halogen-free according to IEC61249-2-21
相关链接
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