Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 9 A, 600 V Enhancement, 3-Pin TO-263 IPB60R360P7ATMA1
- RS庫存編號:
- 214-4372
- 製造零件編號:
- IPB60R360P7ATMA1
- 製造商:
- Infineon
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小計（1 包，共 10 件）*
HK$94.50
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- 加上 2,170 件從 2026年3月30日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 240 | HK$9.45 | HK$94.50 |
| 250 - 490 | HK$9.21 | HK$92.10 |
| 500 + | HK$9.06 | HK$90.60 |
* 參考價格
- RS庫存編號:
- 214-4372
- 製造零件編號:
- IPB60R360P7ATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-263 | |
| Series | 600V CoolMOS P7 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 360mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Maximum Power Dissipation Pd | 41W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 4.5mm | |
| Length | 10.02mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-263 | ||
Series 600V CoolMOS P7 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 360mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Maximum Power Dissipation Pd 41W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 4.5mm | ||
Length 10.02mm | ||
Automotive Standard No | ||
This Infineon 600V Cool MOS P7 super junction MOSFET continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the Cool MOS™ 7th generation platform ensure its high efficiency.
It has rugged body diode
Integrated RG reduces MOSFET oscillation sensitivity
相关链接
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