Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 48 A, 600 V Enhancement, 3-Pin TO-220
- RS庫存編號:
- 214-4413
- 製造零件編號:
- IPP60R060P7XKSA1
- 製造商:
- Infineon
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可享批量折扣
小計（1 管，共 50 件）*
HK$1,172.60
訂單超過 HK$250.00 免費送貨
有庫存
- 500 件準備從其他地點送貨
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單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 50 | HK$23.452 | HK$1,172.60 |
| 100 - 150 | HK$22.942 | HK$1,147.10 |
| 200 + | HK$22.434 | HK$1,121.70 |
* 參考價格
- RS庫存編號:
- 214-4413
- 製造零件編號:
- IPP60R060P7XKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 48A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | 600V CoolMOS P7 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 67nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 164W | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.4mm | |
| Length | 10.2mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 48A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series 600V CoolMOS P7 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 67nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 164W | ||
Maximum Operating Temperature 150°C | ||
Height 4.4mm | ||
Length 10.2mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This Infineon 600V Cool MOS P7 super junction MOSFET continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the Cool MOS™ 7th generation platform ensure its high efficiency.
It has rugged body diode
Integrated RG reduces MOSFET oscillation sensitivity
相关链接
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