Infineon 600V CoolMOS G7 SJ Type N-Channel MOSFET, 23 A, 600 V Enhancement, 8-Pin HSOF IPT60R102G7XTMA1
- RS庫存編號:
- 214-4426
- 製造零件編號:
- IPT60R102G7XTMA1
- 製造商:
- Infineon
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可享批量折扣
小計（1 包，共 5 件）*
HK$195.20
訂單超過 HK$250.00 免費送貨
有庫存
- 加上 1,510 件從 2026年4月27日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 495 | HK$39.04 | HK$195.20 |
| 500 - 995 | HK$38.06 | HK$190.30 |
| 1000 + | HK$37.48 | HK$187.40 |
* 參考價格
- RS庫存編號:
- 214-4426
- 製造零件編號:
- IPT60R102G7XTMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 23A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | HSOF | |
| Series | 600V CoolMOS G7 SJ | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 102mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.8V | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Maximum Power Dissipation Pd | 141W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 10.1mm | |
| Height | 2.4mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 23A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type HSOF | ||
Series 600V CoolMOS G7 SJ | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 102mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.8V | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Maximum Power Dissipation Pd 141W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 10.1mm | ||
Height 2.4mm | ||
Automotive Standard No | ||
This Infineon 600V Cool MOS G7 SJ MOSFET brings together the benefits of the improved 600V Cool MOS™ C7 Gold technology, 4pin Kelvin source capability and the improved thermal properties of the TO-Leadless (TOLL) package to enable a possible SMD solution for high current hard switching topologies such as power factor correction (PFC)
It enables best-in-class R DS(on) in smallest footprint
It has provided production cost reduction
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