onsemi FCH029N N-Channel MOSFET, 75 A, 650 V Enhancement, 3-Pin TO-247 FCH029N65S3-F155
- RS庫存編號:
- 214-8790
- 製造零件編號:
- FCH029N65S3-F155
- 製造商:
- onsemi
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可享批量折扣
查看批量定價選項小計（1 管，共 30 件）*
HK$3,788.40
訂單超過 HK$250.00 免費送貨
有限的庫存
- 60 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 30 | HK$126.28 | HK$3,788.40 |
| 60 - 90 | HK$123.533 | HK$3,705.99 |
| 120 + | HK$120.787 | HK$3,623.61 |
* 參考價格
- RS庫存編號:
- 214-8790
- 製造零件編號:
- FCH029N65S3-F155
- 製造商:
- onsemi
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 75A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | FCH029N | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 29mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 463W | |
| Typical Gate Charge Qg @ Vgs | 201nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 21.1mm | |
| Standards/Approvals | These Devices are Pb-Free and are RoHS | |
| Height | 5.1mm | |
| Length | 15.9mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 75A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series FCH029N | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 29mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 463W | ||
Typical Gate Charge Qg @ Vgs 201nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 21.1mm | ||
Standards/Approvals These Devices are Pb-Free and are RoHS | ||
Height 5.1mm | ||
Length 15.9mm | ||
Automotive Standard No | ||
The ON Semiconductor MOSFET is brand−new high voltage super−junction MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.
Pb−Free
RoHS compliant
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