Infineon OptiMOS N-Channel MOSFET, 50 A, 80 V Enhancement, 7-Pin MG-WDSON

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小計（1 卷，共 5000 件）*

HK$27,430.00

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單位
每單位
每卷*
5000 - 20000HK$5.486HK$27,430.00
25000 +HK$4.937HK$24,685.00

* 參考價格

RS庫存編號:
214-8966
製造零件編號:
BSB104N08NP3GXUSA1
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

80V

Series

OptiMOS

Package Type

MG-WDSON

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

10.4mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

23nC

Maximum Power Dissipation Pd

42W

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

20V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Length

5.05mm

Width

6.35mm

Standards/Approvals

No

Height

700μm

Automotive Standard

No

The Infineon range of OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). These consists of range of energy efficient MOSFET transistors, in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces.

Low parasitic inductance

Optimized technology for DC/DC converters

Dual sided cooling

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