Infineon OptiMOS-T Type N-Channel MOSFET, 70 A, 120 V Enhancement, 3-Pin TO-220
- RS庫存編號:
- 214-9096
- 製造零件編號:
- IPP70N12S311AKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 管，共 50 件）*
HK$759.60
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2026年8月11日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 50 | HK$15.192 | HK$759.60 |
| 100 - 150 | HK$14.736 | HK$736.80 |
| 200 + | HK$14.294 | HK$714.70 |
* 參考價格
- RS庫存編號:
- 214-9096
- 製造零件編號:
- IPP70N12S311AKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 70A | |
| Maximum Drain Source Voltage Vds | 120V | |
| Package Type | TO-220 | |
| Series | OptiMOS-T | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 11.6mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 125W | |
| Typical Gate Charge Qg @ Vgs | 51nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 10.36mm | |
| Height | 9.45mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 70A | ||
Maximum Drain Source Voltage Vds 120V | ||
Package Type TO-220 | ||
Series OptiMOS-T | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 11.6mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 125W | ||
Typical Gate Charge Qg @ Vgs 51nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 10.36mm | ||
Height 9.45mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon range offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and Strong IRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
The product is AEC Q101 qualified
It has 175°C operating temperature
100% Avalanche tested
相关链接
- Infineon OptiMOS-T Type N-Channel MOSFET 120 V Enhancement, 3-Pin TO-220 IPP70N12S311AKSA1
- Infineon OptiMOS-T Type N-Channel MOSFET 120 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS-T Type N-Channel MOSFET 120 V Enhancement, 3-Pin TO-252 IPD70N12S311ATMA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 120 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS 3 Type N-Channel MOSFET 120 V Enhancement, 3-Pin TO-220 IPP041N12N3GXKSA1
- Infineon OptiMOS Type N-Channel MOSFET 80 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS Type N-Channel MOSFET 80 V Enhancement, 3-Pin TO-220 IPP023N08N5AKSA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-220