Infineon N Channel Mosfet OptiMOS 2 Type N-Channel MOSFET, 50 A, 25 V Enhancement, 8-Pin Power Block 5x6 BSG0811NDATMA1
- RS庫存編號:
- 215-2467
- 製造零件編號:
- BSG0811NDATMA1
- 製造商:
- Infineon
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HK$149.90
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單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 1240 | HK$14.99 | HK$149.90 |
| 1250 - 2490 | HK$14.61 | HK$146.10 |
| 2500 + | HK$14.39 | HK$143.90 |
* 參考價格
- RS庫存編號:
- 215-2467
- 製造零件編號:
- BSG0811NDATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Series | OptiMOS | |
| Package Type | Power Block 5x6 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 8.4nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.84V | |
| Maximum Power Dissipation Pd | 6.25W | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | N Channel Mosfet | |
| Length | 5.1mm | |
| Standards/Approvals | JEDEC, RoHS, IEC61249-2-21 | |
| Height | 1.1mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 25V | ||
Series OptiMOS | ||
Package Type Power Block 5x6 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 8.4nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.84V | ||
Maximum Power Dissipation Pd 6.25W | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration N Channel Mosfet | ||
Length 5.1mm | ||
Standards/Approvals JEDEC, RoHS, IEC61249-2-21 | ||
Height 1.1mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Infineon OptiMOS Series MOSFET, 25V Drain Source Voltage, 50A Maximum Continuous Drain Current - BSG0811NDATMA1
This MOSFET is a surface-mount N-channel transistor designed for high-current switching in compact power designs. It operates with an enhancement-mode N-channel topology and incorporates two elements on a single chip to serve dual-switch functions. The device is suitable for applications requiring a logic-level gate and low on-resistance within a low-voltage environment, and is supplied in a Power Block 5x6 package for dense board layouts.
Features and Benefits:
• Very low Rds(on) of 3mΩ enabling reduced conduction losses
• Maximum continuous drain current 50A for high-current demands
• Logic-level gate with Vgs limit of 4.5V for direct-drive compatibility
• Typical gate charge Qg 8.4nC supporting fast gate transitions
• Power dissipation rating 6.25W for effective thermal handling
• Operational range -55°C to 150°C for wide temperature tolerance
• Maximum continuous drain current 50A for high-current demands
• Logic-level gate with Vgs limit of 4.5V for direct-drive compatibility
• Typical gate charge Qg 8.4nC supporting fast gate transitions
• Power dissipation rating 6.25W for effective thermal handling
• Operational range -55°C to 150°C for wide temperature tolerance
Applications
• Suitable for synchronous buck converters in power supplies
• Ideal for server VRM and high-current DC-DC modules
• Used with battery-management circuits in low-voltage systems
• Can be used for motor-driver stages in compact controllers
• Suitable for high-efficiency power distribution and load switching
• Ideal for server VRM and high-current DC-DC modules
• Used with battery-management circuits in low-voltage systems
• Can be used for motor-driver stages in compact controllers
• Suitable for high-efficiency power distribution and load switching
What thermal limits should be considered during PCB design?
The device can operate up to150°C junction temperature and dissipates up to6.25W
thermal vias and adequate copper area are recommended to manage heat.
How does the dual-element construction affect layout choices?
Two elements per chip provide parallel current paths, reducing individual die stress and allowing tighter placement for symmetrical thermal distribution.
What gate-drive characteristics are required for efficient switching?
A gate drive compatible with a maximum gate-source rating of 4.5V and low charge requirement of 8.4nC reduces gate-driver losses and switching energy.
Are there material or regulatory standards relevant to selection?
The component conforms to JEDEC and RoHS and is manufactured on IEC61249-2-21 substrate, indicating standardised material and lead-free requirements.
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