Infineon SIPMOS Type P-Channel MOSFET, 620 mA, 60 V Enhancement, 3-Pin SC-59 BSR315PH6327XTSA1

此圖片僅供參考,請參閲產品詳細資訊及規格

可享批量折扣
查看批量定價選項

小計(1 包,共 50 件)*

HK$180.80

Add to Basket
選擇或輸入數量
有庫存
  • 加上 1,900 件從 2026年6月08日 起發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位
每單位
每包*
50 - 700HK$3.616HK$180.80
750 - 1450HK$3.526HK$176.30
1500 +HK$3.472HK$173.60

* 參考價格

包裝方式:
RS庫存編號:
215-2469
製造零件編號:
BSR315PH6327XTSA1
製造商:
Infineon
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

620mA

Maximum Drain Source Voltage Vds

60V

Package Type

SC-59

Series

SIPMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

800mΩ

Channel Mode

Enhancement

Forward Voltage Vf

-1.2V

Typical Gate Charge Qg @ Vgs

6nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

0.5W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Infineon SIPMOS® Small-Signal-Transistor P-channel enhancement mode Field-Effect Transistor (FET), -20V maximum drain source voltage with SOT-23 package type. The Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. The BSS84P is a p-channel enhancement mode MOSFET in a small surface mount package with superior switching performance. This product is particularly suited for low-voltage, low-current applications.

Enhancement mode

Logic level

Avalanche rated

Fast switching

Dv/dt rated

Pb-free lead-plating

相关链接

第一時間了解我們的最新產品和優惠

電郵

您在訂閱此郵件時提供的個人信息將根據《隱私政策》進行處理。