Infineon 600V CoolMOS CFD7 N-Channel MOSFET, 14 A, 650 V Enhancement, 5-Pin ThinPAK IPL60R185CFD7AUMA1

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小計（1 卷，共 3000 件）*

HK$35,643.00

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3000 - 12000HK$11.881HK$35,643.00
15000 +HK$11.644HK$34,932.00

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RS庫存編號:
215-2521
製造零件編號:
IPL60R185CFD7AUMA1
製造商:
Infineon
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品牌

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

14A

Maximum Drain Source Voltage Vds

650V

Series

600V CoolMOS CFD7

Package Type

ThinPAK

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

185mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

28nC

Maximum Power Dissipation Pd

85W

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

1V

Maximum Operating Temperature

150°C

Length

8.1mm

Width

1.1mm

Standards/Approvals

No

Height

8.1mm

Automotive Standard

No

The Infineon 600V Cool MOS™ CFD7 is latest high voltage super junction MOSFET technology with integrated fast body diode, completing the Cool MOS™ 7 series. Cool MOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behaviour and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.

Ultra-fast body diode

Best-in-class reverse recovery charge (Qrr)

Improved reverse diode dv/dt and dif/dt ruggedness

Lowest FOM RDS(on) x Qg and Eoss

Best-in-class RDS(on)/package combinations

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