Infineon IPD Type N-Channel MOSFET, 6 A, 600 V Enhancement, 3-Pin TO-252 IPD60R600P7ATMA1
- RS庫存編號:
- 217-2528
- 製造零件編號:
- IPD60R600P7ATMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 20 件）*
HK$146.30
訂單超過 HK$250.00 免費送貨
有庫存
- 200 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 20 - 620 | HK$7.315 | HK$146.30 |
| 640 - 1240 | HK$7.13 | HK$142.60 |
| 1260 + | HK$7.02 | HK$140.40 |
* 參考價格
- RS庫存編號:
- 217-2528
- 製造零件編號:
- IPD60R600P7ATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IPD | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 600mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 9nC | |
| Maximum Power Dissipation Pd | 41W | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.41mm | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IPD | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 600mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 9nC | ||
Maximum Power Dissipation Pd 41W | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Height 2.41mm | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.
600V P7 enables excellent FOM R DS(on)xE oss DS(on)xQ G
ESD ruggedness of ≥ 2kV (HBM class 2)
Integrated gate resistor R G
Rugged body diode
Wide portfolio in through hole and surface mount packages
Both standard grade and industrial grade parts are available
相关链接
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