Infineon IPN Type N-Channel MOSFET, 10 A, 700 V Enhancement, 3-Pin SOT-223 IPN70R450P7SATMA1
- RS庫存編號:
- 217-2548
- 製造零件編號:
- IPN70R450P7SATMA1
- 製造商:
- Infineon
可享批量折扣
查看批量定價選項小計（1 包，共 20 件）*
HK$82.40
訂單超過 HK$250.00 免費送貨
有庫存
- 加上 720 件從 2026年6月08日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 20 - 740 | HK$4.12 | HK$82.40 |
| 760 - 1480 | HK$4.015 | HK$80.30 |
| 1500 + | HK$3.955 | HK$79.10 |
* 參考價格
- RS庫存編號:
- 217-2548
- 製造零件編號:
- IPN70R450P7SATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | SOT-223 | |
| Series | IPN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 450mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 6.2W | |
| Typical Gate Charge Qg @ Vgs | 13.1nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.8mm | |
| Standards/Approvals | No | |
| Length | 6.7mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type SOT-223 | ||
Series IPN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 450mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 6.2W | ||
Typical Gate Charge Qg @ Vgs 13.1nC | ||
Maximum Operating Temperature 150°C | ||
Height 1.8mm | ||
Standards/Approvals No | ||
Length 6.7mm | ||
Automotive Standard No | ||
The Infineon CoolMOS™ P7 superjunction (SJ) MOSFET is designed to address typical challenges in the low power SMPS market, by offering excellent performance and ease-of-use, enabling improved form factors and price competitiveness. The SOT-223 package is a cost effective one-to-one drop-in alternative to DPAK that also enables footprint reduction in some designs. It can be placed on a typical DPAK footprint and shows comparable thermal performance. This combination makes CoolMOS™ P7 in SOT-223 a perfect fit for its target applications.
Extremely low losses due to very low FOMR DS(on)*Qg and RDS(on)*Eoss
Excellent thermal behaviour
Integrated ESD protection diode
Low switching losses(Eoss)
Product validation acc. JEDEC Standard
相关链接
- Infineon IPN Type N-Channel MOSFET 700 V Enhancement, 3-Pin SOT-223
- Infineon IPN Type N-Channel MOSFET 700 V Enhancement, 3-Pin SOT-223
- Infineon IPN Type N-Channel MOSFET 700 V Enhancement, 3-Pin SOT-223
- Infineon IPN Type N-Channel MOSFET 700 V Enhancement, 3-Pin SOT-223 IPN70R750P7SATMA1
- Infineon IPN Type N-Channel MOSFET 700 V Enhancement, 3-Pin SOT-223 IPN70R1K4P7SATMA1
- Infineon IPN Type N-Channel MOSFET 800 V Enhancement, 3-Pin SOT-223
- Infineon IPN Type N-Channel MOSFET 600 V Enhancement, 3-Pin SOT-223
- Infineon IPN Type N-Channel MOSFET 800 V Enhancement, 3-Pin SOT-223 IPN80R1K2P7ATMA1