Infineon CoolMOS P7 N-Channel MOSFET, 18 A, 600 V Enhancement, 4-Pin TO-247 IPZA60R180P7XKSA1
- RS庫存編號:
- 217-2592
- 製造零件編號:
- IPZA60R180P7XKSA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 管，共 30 件）*
HK$752.10
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單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 30 | HK$25.07 | HK$752.10 |
| 60 - 90 | HK$24.523 | HK$735.69 |
| 120 + | HK$23.98 | HK$719.40 |
* 參考價格
- RS庫存編號:
- 217-2592
- 製造零件編號:
- IPZA60R180P7XKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | CoolMOS P7 | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 180mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 900mV | |
| Maximum Power Dissipation Pd | 72W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 5.1mm | |
| Height | 41.2mm | |
| Length | 15.9mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series CoolMOS P7 | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 180mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 900mV | ||
Maximum Power Dissipation Pd 72W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 5.1mm | ||
Height 41.2mm | ||
Length 15.9mm | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.
600V P7 enables excellent FOM R DS(on)xE oss DS(on)xQ G
ESD ruggedness of ≥ 2kV (HBM class 2)
Integrated gate resistor R G
Rugged body diode
Wide portfolio in through hole and surface mount packages
Both standard grade and industrial grade parts are available
相关链接
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