Infineon Dual OptiMOS-T2 2 N-Channel Power Transistor, 20 A, 100 V Enhancement, 8-Pin TDSON IPG20N10S436AATMA1

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HK$26,125.00

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RS庫存編號:
218-3059
製造零件編號:
IPG20N10S436AATMA1
製造商:
Infineon
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品牌

Infineon

Channel Type

N

Product Type

Power Transistor

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

100V

Series

OptiMOS-T2

Package Type

TDSON

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

36mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

43W

Typical Gate Charge Qg @ Vgs

9.4nC

Transistor Configuration

Dual

Maximum Operating Temperature

175°C

Standards/Approvals

AEC Q101, RoHS

Length

5.15mm

Height

1mm

Width

5.9mm

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

The Infineon OptiMOS™-T2 series dual N- channel automotive MOSFET. It is feasible for automatic optical inspection (AOI).

Dual N-channel - Enhancement mode

100% Avalanche tested

175°C operating temperature

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