Infineon HEXFET Type N-Channel MOSFET, 28 A, 150 V, 2-Pin DirectFET
- RS庫存編號:
- 218-3101
- 製造零件編號:
- IRF6775MTRPBF
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 卷，共 4800 件）*
HK$38,227.20
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2026年10月12日 發貨
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單位 | 每單位 | 每卷* |
|---|---|---|
| 4800 - 19200 | HK$7.964 | HK$38,227.20 |
| 24000 + | HK$7.725 | HK$37,080.00 |
* 參考價格
- RS庫存編號:
- 218-3101
- 製造零件編號:
- IRF6775MTRPBF
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 28A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | DirectFET | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 2 | |
| Maximum Drain Source Resistance Rds | 56mΩ | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Maximum Power Dissipation Pd | 89W | |
| Forward Voltage Vf | 1.3V | |
| Height | 0.68mm | |
| Length | 4.85mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 28A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type DirectFET | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 2 | ||
Maximum Drain Source Resistance Rds 56mΩ | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Maximum Power Dissipation Pd 89W | ||
Forward Voltage Vf 1.3V | ||
Height 0.68mm | ||
Length 4.85mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 150V Single N-channel HEXFET power MOSFET. This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. The lower inductance improves EMI performance by reducing the voltage ringing that accompanies fast current transients.
Latest MOSFET Silicon technology
Dual sided cooling compatible
Compatible with existing surface mount technologies
Lead-Free
相关链接
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