Infineon HEXFET Type N-Channel MOSFET, 128 A, 75 V, 3-Pin TO-263 IRFS3307ZTRRPBF
- RS庫存編號:
- 218-3118
- 製造零件編號:
- IRFS3307ZTRRPBF
- 製造商:
- Infineon
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HK$184.00
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單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 190 | HK$18.40 | HK$184.00 |
| 200 - 390 | HK$17.93 | HK$179.30 |
| 400 + | HK$17.66 | HK$176.60 |
* 參考價格
- RS庫存編號:
- 218-3118
- 製造零件編號:
- IRFS3307ZTRRPBF
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 128A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5.8mΩ | |
| Typical Gate Charge Qg @ Vgs | 110nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 230W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 9.65mm | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 128A | ||
Maximum Drain Source Voltage Vds 75V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5.8mΩ | ||
Typical Gate Charge Qg @ Vgs 110nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 230W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 9.65mm | ||
Length 10.67mm | ||
Automotive Standard No | ||
The Infineon HEXFET series single N-Channel Power MOSFET integrated with D2PAK (TO-263) type package.
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
相关链接
- Infineon HEXFET Type N-Channel MOSFET 75 V, 3-Pin TO-263
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