Infineon CoolMOS P7 N-Channel MOSFET, 1.5 A, 800 V Enhancement, 3-Pin SOT-223 IPN80R4K5P7ATMA1
- RS庫存編號:
- 219-5997
- 製造零件編號:
- IPN80R4K5P7ATMA1
- 製造商:
- Infineon
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HK$134.40
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單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 25 | HK$5.376 | HK$134.40 |
| 50 - 75 | HK$5.28 | HK$132.00 |
| 100 - 225 | HK$5.188 | HK$129.70 |
| 250 - 475 | HK$5.092 | HK$127.30 |
| 500 + | HK$5.00 | HK$125.00 |
* 參考價格
- RS庫存編號:
- 219-5997
- 製造零件編號:
- IPN80R4K5P7ATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 1.5A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | SOT-223 | |
| Series | CoolMOS P7 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 450mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 4nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 6W | |
| Forward Voltage Vf | 900mV | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.7mm | |
| Height | 1.8mm | |
| Standards/Approvals | No | |
| Width | 3.7mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 1.5A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type SOT-223 | ||
Series CoolMOS P7 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 450mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 4nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 6W | ||
Forward Voltage Vf 900mV | ||
Maximum Operating Temperature 150°C | ||
Length 6.7mm | ||
Height 1.8mm | ||
Standards/Approvals No | ||
Width 3.7mm | ||
Automotive Standard No | ||
Infineon CoolMOS P7 Series MOSFET, 800V Maximum Drain Source Voltage, 1.5A Maximum Continuous Drain Current - IPN80R4K5P7ATMA1
This MOSFET is a high-voltage switching transistor designed for surface-mount power conversion and control tasks. It operates reliably across a wide ambient range and is intended for use where robust voltage blocking and moderate continuous current capability are required.
Features and Benefits:
• 800V drain-source rating enables high-voltage applications
• 450mΩ RDS(on) limits conduction losses during switching
• 4nC typical gate charge reduces drive energy requirements
• 1.5A continuous drain current supports steady-state loads
• 6W maximum power dissipation manages thermal stress during operation
• ±20V gate tolerance allows standard gate‑drive voltages
• 450mΩ RDS(on) limits conduction losses during switching
• 4nC typical gate charge reduces drive energy requirements
• 1.5A continuous drain current supports steady-state loads
• 6W maximum power dissipation manages thermal stress during operation
• ±20V gate tolerance allows standard gate‑drive voltages
Applications
• Suitable for offline power supplies handling high voltages
• Ideal for boost converters in industrial systems
• Used for switch‑mode power stages with moderate currents
• Can be used for semiconductor testing fixtures requiring 800V
• Used with surface‑mount assemblies on Compact power boards
• Ideal for boost converters in industrial systems
• Used for switch‑mode power stages with moderate currents
• Can be used for semiconductor testing fixtures requiring 800V
• Used with surface‑mount assemblies on Compact power boards
What ambient temperatures can it operate within?
It functions across a wide temperature span from −55°C to 150°C, providing suitability for severe thermal environments.
How does the package influence thermal performance?
The SOT‑223 surface‑mount package offers a small footprint while enabling heat dissipation compatible with a 6W maximum power dissipation when appropriately mounted.
What gate‑drive considerations are required?
The device accepts up to ±20V between gate and source and typically needs drive energy corresponding to a 4nC total gate charge for Rapid switching.
What switching topology benefits most from its characteristics?
High‑voltage N‑channel enhancement operation makes it appropriate for topologies that require 800V blocking with moderate continuous current handling.
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