Infineon HEXFET N-Channel MOSFET & Diode, 180 A, 100 V Enhancement, 3-Pin TO-247 AUIRFP4110

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HK$143.20

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包裝方式:
RS庫存編號:
220-7345
製造零件編號:
AUIRFP4110
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET & Diode

Channel Type

N

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

100V

Series

HEXFET

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

45mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

370W

Maximum Gate Source Voltage Vgs

20V

Typical Gate Charge Qg @ Vgs

150nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

15.87mm

Width

20.7mm

Height

5.31mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Infineon AUIRFP4110 specifically designed for Automotive applications, this HEXFET power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Advanced process technology

Ultra-low on-resistance

175°C operating temperature

Fast switching

Repetitive avalanche allowed up to Tjmax

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