Infineon OptiMOS 5 Type N-Channel MOSFET & Diode, 105 A, 150 V Enhancement, 3-Pin TO-263
- RS庫存編號:
- 220-7384
- 製造零件編號:
- IPB083N15N5LFATMA1
- 製造商:
- Infineon
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查看批量定價選項小計(1 卷,共 1000 件)*
HK$30,152.00
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2026年10月26日 發貨
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單位 | 每單位 | 每卷* |
|---|---|---|
| 1000 - 1000 | HK$30.152 | HK$30,152.00 |
| 2000 - 3000 | HK$29.549 | HK$29,549.00 |
| 4000 + | HK$28.958 | HK$28,958.00 |
* 參考價格
- RS庫存編號:
- 220-7384
- 製造零件編號:
- IPB083N15N5LFATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 105A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | OptiMOS 5 | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8.3mΩ | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 105A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series OptiMOS 5 | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8.3mΩ | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon OptiMOS Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.
Combination of low R DS(on) and wide safe operating area (SOA)
High max. pulse current
High continuous pulse current
Rugged linear mode operation
Low conduction losses
Higher in-rush current enabled for faster start-up and shorter down time
相关链接
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