Infineon OptiMOS 5 N-Channel MOSFET & Diode, 105 A, 150 V Enhancement, 3-Pin TO-263 IPB083N15N5LFATMA1

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小計（1 卷，共 1000 件）*

HK$28,081.00

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1000 - 1000HK$28.081HK$28,081.00
2000 - 3000HK$27.519HK$27,519.00
4000 +HK$26.969HK$26,969.00

* 參考價格

RS庫存編號:
220-7384
製造零件編號:
IPB083N15N5LFATMA1
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET & Diode

Channel Type

N

Maximum Continuous Drain Current Id

105A

Maximum Drain Source Voltage Vds

150V

Series

OptiMOS 5

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

8.3mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon OptiMOS Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.

Combination of low R DS(on) and wide safe operating area (SOA)

High max. pulse current

High continuous pulse current

Rugged linear mode operation

Low conduction losses

Higher in-rush current enabled for faster start-up and shorter down time

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