Infineon OptiMOS Type P-Channel MOSFET & Diode, 90 A, 30 V Enhancement, 3-Pin TO-252 IPD90P03P4L04ATMA2
- RS庫存編號:
- 220-7416
- 製造零件編號:
- IPD90P03P4L04ATMA2
- 製造商:
- Infineon
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HK$114.00
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 620 | HK$22.80 | HK$114.00 |
| 625 - 1245 | HK$22.22 | HK$111.10 |
| 1250 + | HK$21.88 | HK$109.40 |
* 參考價格
- RS庫存編號:
- 220-7416
- 製造零件編號:
- IPD90P03P4L04ATMA2
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 90A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TO-252 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.1mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 125nC | |
| Maximum Gate Source Voltage Vgs | 5V | |
| Maximum Power Dissipation Pd | 137W | |
| Forward Voltage Vf | -1.3V | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.22mm | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Height | 2.41mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 90A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TO-252 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.1mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 125nC | ||
Maximum Gate Source Voltage Vgs 5V | ||
Maximum Power Dissipation Pd 137W | ||
Forward Voltage Vf -1.3V | ||
Maximum Operating Temperature 175°C | ||
Width 6.22mm | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Height 2.41mm | ||
Automotive Standard AEC-Q101 | ||
Infineon OptiMOS Series MOSFET & Diode, 30V Maximum Drain Source Voltage, 90A Maximum Continuous Drain Current - IPD90P03P4L04ATMA2
This MOSFET & diode is a surface-mount power device designed for high-current switching in automotive and power-conversion environments. It integrates a body diode and operates as a P-channel enhancement-mode transistor, offering suitability for systems that require low on-resistance and robust thermal endurance across an extended temperature range.
Features and Benefits:
• 30V drain rating enables low-voltage power stage designs
• 4.1mΩ Rds(on) reduces conduction losses during heavy currents
• 90A continuous drain capability supports high-current applications
• 137W power dissipation allows sustained thermal loading
• 125nC typical gate charge ensures predictable switching behaviour
• 4.1mΩ Rds(on) reduces conduction losses during heavy currents
• 90A continuous drain capability supports high-current applications
• 137W power dissipation allows sustained thermal loading
• 125nC typical gate charge ensures predictable switching behaviour
Applications
• Suitable for automotive DC-DC converter power stages
• Ideal for high-current synchronous rectification circuits
• Used with motor-drive low-voltage power rails
• Can be used for battery management and power distribution
• Ideal for high-current synchronous rectification circuits
• Used with motor-drive low-voltage power rails
• Can be used for battery management and power distribution
What package and mounting style does it use?
It is supplied in a TO-252 package and is intended for surface mounting.
How does it perform across temperature extremes?
It is rated to operate from -55°C up to 175°C for wide temperature deployment.
What is the gate voltage limit and switching implication?
The maximum gate-source voltage is 5V which defines the allowed gate drive amplitude and influences switching margin.
What is the forward voltage characteristic of the integrated diode?
The body diode has a forward voltage of -1.3V as measured under specified conditions.
相关链接
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