Infineon Dual OptiMOS 2 Type N-Channel MOSFET & Diode, 20 A, 100 V Enhancement, 8-Pin TDSON

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RS庫存編號:
220-7423
製造零件編號:
IPG20N10S4L35AATMA1
製造商:
Infineon
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品牌

Infineon

Channel Type

Type N

Product Type

MOSFET & Diode

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

100V

Package Type

TDSON

Series

OptiMOS

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

35mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

43W

Typical Gate Charge Qg @ Vgs

13.4nC

Maximum Gate Source Voltage Vgs

±16 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Transistor Configuration

Dual

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS Compliant

Length

5.15mm

Height

1mm

Width

5.9 mm

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

The Infineon offers a wide range of 75V-100V N-channel automotive qualified power MOSFETs using the new OptiMOS technology in various packages a RDS(on) range from 1.2mΩ up to 190mΩReducing CO2 emissions of passenger cars is accelerating the 48V board net adoption and therefore the 48V like starter generators (main inverter), battery main switches, DCDC converter as well as 48V auxiliaries. For this emerging market, Infineon is offering a broad portfolio of Automotive 80V and 100V MOSFETs, that are housed in different package types like TOLL (HSOF-8), TOLG (HSOG-8), TOLT (HDSOP-16), SSO8 (TDSON-8) and S308 (TSDSON-8), in order to provide solutions for different power requirements as well as different cooling concepts on electronic control unit (ECU) level. Next to the 48V applications the 80V and 100V MOSFETs are also used for example in LED lighting, fuel injection as well as in-vehicle wireless charging.

Dual N-channel Logic Level - Enhancement mode

MSL1 up to 260°C peak reflow

175°C operating temperature

Feasible for automatic optical inspection (AOI)

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