Infineon Dual OptiMOS 2 Type N-Channel MOSFET Arrays, 20 A, 60 V Enhancement, 8-Pin TDSON IPG20N06S4L26AATMA1
- RS庫存編號:
- 223-8523
- 製造零件編號:
- IPG20N06S4L26AATMA1
- 製造商:
- Infineon
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可享批量折扣
小計（1 包，共 15 件）*
HK$112.605
訂單超過 HK$250.00 免費送貨
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- 加上 4,785 件從 2026年3月09日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 15 - 15 | HK$7.507 | HK$112.61 |
| 30 - 75 | HK$7.327 | HK$109.91 |
| 90 - 225 | HK$7.133 | HK$107.00 |
| 240 - 465 | HK$6.96 | HK$104.40 |
| 480 + | HK$6.78 | HK$101.70 |
* 參考價格
- RS庫存編號:
- 223-8523
- 製造零件編號:
- IPG20N06S4L26AATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET Arrays | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TDSON | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 26mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 33W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Dual | |
| Length | 5.15mm | |
| Height | 1mm | |
| Width | 5.9 mm | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET Arrays | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TDSON | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 26mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 33W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Dual | ||
Length 5.15mm | ||
Height 1mm | ||
Width 5.9 mm | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS series dual N-channel MOSFET has drain to source voltage of 60 V. It has benefits of larger source lead frame connection for wire bonding and bond wire is 200um for up to 20A current.
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package
Ultra low Rds
100% Avalanche tested
相关链接
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