onsemi NTMT150N N-Channel MOSFET, 24 A, 650 V Enhancement, 4-Pin PQFN NTMT150N65S3HF
- RS庫存編號:
- 221-6738
- 製造零件編號:
- NTMT150N65S3HF
- 製造商:
- onsemi
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HK$95.10
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 8 | HK$47.55 | HK$95.10 |
| 10 - 98 | HK$46.65 | HK$93.30 |
| 100 - 248 | HK$45.85 | HK$91.70 |
| 250 - 498 | HK$45.00 | HK$90.00 |
| 500 + | HK$44.25 | HK$88.50 |
* 參考價格
- RS庫存編號:
- 221-6738
- 製造零件編號:
- NTMT150N65S3HF
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PQFN | |
| Series | NTMT150N | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 150mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 43nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 192W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Width | 1.1mm | |
| Length | 8.1mm | |
| Height | 8.1mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PQFN | ||
Series NTMT150N | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 150mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 43nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 192W | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Width 1.1mm | ||
Length 8.1mm | ||
Height 8.1mm | ||
Automotive Standard No | ||
The ON Semiconductor SUPERFET III MOSFET has high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.
Ultra low gate charge
low effective output capacitance 400 pF
100% avalanche tested
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