Infineon OptiMOS Type N-Channel MOSFET, 60 A, 100 V Enhancement, 3-Pin TO-252 IPD60N10S4L12ATMA1

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HK$59.70

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20 - 90HK$5.86HK$58.60
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500 +HK$5.56HK$55.60

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包裝方式:
RS庫存編號:
222-4669
製造零件編號:
IPD60N10S4L12ATMA1
製造商:
Infineon
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品牌

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-252

Series

OptiMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

12mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

94W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

38nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Length

6.5mm

Height

2.3mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Green Product (RoHS compliant)

MSL1 up to 260°C peak reflow AEC Q101 qualified

OptiMOS™ - power MOSFET for automotive applications

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