Infineon CoolMOS N-Channel MOSFET, 9.4 A, 700 V Enhancement, 3-Pin SOT-223 IPN70R1K2P7SATMA1

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小計(1 卷,共 3000 件)*

HK$6,585.00

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RS庫存編號:
222-4686
製造零件編號:
IPN70R1K2P7SATMA1
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

9.4A

Maximum Drain Source Voltage Vds

700V

Series

CoolMOS

Package Type

SOT-223

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.2Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

16V

Typical Gate Charge Qg @ Vgs

4.8nC

Minimum Operating Temperature

-40°C

Maximum Power Dissipation Pd

6.3W

Forward Voltage Vf

900mV

Maximum Operating Temperature

150°C

Length

6.7mm

Standards/Approvals

No

Width

3.7mm

Height

1.8mm

Automotive Standard

No

The Infineon design of Cool MOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest Cool MOS™ P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV, etc.

Product validation acc. JEDEC Standard

Low switching losses (Eoss) Integrated ESD protection diode

Excellent thermal behaviour

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