Infineon CoolMOS N-Channel MOSFET, 111 A, 650 V Enhancement, 3-Pin TO-247 IPW60R018CFD7XKSA1

此圖片僅供參考,請參閲產品詳細資訊及規格

可享批量折扣
查看批量定價選項

小計(1 管,共 30 件)*

HK$3,321.30

Add to Basket
選擇或輸入數量
库存信息目前无法访问 - 请稍候查看

單位
每單位
每管*
30 - 60HK$110.71HK$3,321.30
90 - 120HK$107.727HK$3,231.81
150 +HK$105.507HK$3,165.21

* 參考價格

RS庫存編號:
222-4718
製造零件編號:
IPW60R018CFD7XKSA1
製造商:
Infineon
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

111A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-247

Series

CoolMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

18mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20V

Maximum Power Dissipation Pd

416W

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

251nC

Maximum Operating Temperature

150°C

Length

16.13mm

Width

21.1mm

Standards/Approvals

No

Height

5.21mm

Automotive Standard

No

The Infineon design of Cool MOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 600V Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm².

Pb-free lead plating; RoHS compliant

Superior thermal resistance 100% avalanche tested

Halogen-free according to IEC61249-2-23

相关链接