Infineon CoolMOS N-Channel MOSFET, 111 A, 650 V Enhancement, 3-Pin TO-247 IPW60R018CFD7XKSA1

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HK$156.70

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包裝方式:
RS庫存編號:
222-4719
製造零件編號:
IPW60R018CFD7XKSA1
製造商:
Infineon
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品牌

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

111A

Maximum Drain Source Voltage Vds

650V

Series

CoolMOS

Package Type

TO-247

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

18mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

416W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

251nC

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

1V

Maximum Operating Temperature

150°C

Width

21.1mm

Standards/Approvals

No

Length

16.13mm

Height

5.21mm

Automotive Standard

No

The Infineon design of Cool MOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 600V Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm².

Pb-free lead plating; RoHS compliant

Superior thermal resistance 100% avalanche tested

Halogen-free according to IEC61249-2-23

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