Infineon CoolMOS N-Channel MOSFET, 33 A, 700 V Enhancement, 4-Pin TO-247 IPZ65R065C7XKSA1
- RS庫存編號:
- 222-4728
- 製造零件編號:
- IPZ65R065C7XKSA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 管，共 30 件）*
HK$1,415.91
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單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 60 | HK$47.197 | HK$1,415.91 |
| 90 - 120 | HK$45.38 | HK$1,361.40 |
| 150 + | HK$44.81 | HK$1,344.30 |
* 參考價格
- RS庫存編號:
- 222-4728
- 製造零件編號:
- IPZ65R065C7XKSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 33A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | TO-247 | |
| Series | CoolMOS | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 171W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 65nC | |
| Forward Voltage Vf | 900mV | |
| Width | 5.21mm | |
| Standards/Approvals | No | |
| Height | 21.1mm | |
| Length | 16.13mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 33A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type TO-247 | ||
Series CoolMOS | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 171W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 65nC | ||
Forward Voltage Vf 900mV | ||
Width 5.21mm | ||
Standards/Approvals No | ||
Height 21.1mm | ||
Length 16.13mm | ||
Automotive Standard No | ||
The Infineon design of Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching super junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.
Increased MOSFET dv/dt ruggedness
Better efficiency due to best in class FOM RDS(on)*Eoss and RDS(on)*Qg
Best in class RDS(on) /package
Pb-free plating, halogen free mold compound
相关链接
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