Infineon HEXFET N-Channel MOSFET, 84 A, 60 V Enhancement, 3-Pin TO-263 IRF1010ESTRLPBF
- RS庫存編號:
- 222-4733
- Distrelec 貨號:
- 304-39-411
- 製造零件編號:
- IRF1010ESTRLPBF
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 包，共 10 件）*
HK$119.60
库存信息目前无法访问 - 请稍候查看
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 10 | HK$11.96 | HK$119.60 |
| 20 - 90 | HK$11.74 | HK$117.40 |
| 100 - 240 | HK$11.53 | HK$115.30 |
| 250 - 490 | HK$11.33 | HK$113.30 |
| 500 + | HK$11.12 | HK$111.20 |
* 參考價格
- RS庫存編號:
- 222-4733
- Distrelec 貨號:
- 304-39-411
- 製造零件編號:
- IRF1010ESTRLPBF
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 84A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 12mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 86.6nC | |
| Maximum Power Dissipation Pd | 170W | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.83mm | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Width | 9.65mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 84A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 12mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 86.6nC | ||
Maximum Power Dissipation Pd 170W | ||
Maximum Operating Temperature 175°C | ||
Height 4.83mm | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Width 9.65mm | ||
Automotive Standard No | ||
The Infineon design of HEXFET® Power MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Advanced process technology
Ultra-low on-resistance Fast switching
Lead-Free, RoHS Compliant
相关链接
- Infineon HEXFET N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263
- Infineon HEXFET N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
- Infineon HEXFET N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220 IRF1010EZPBF
- Infineon HEXFET N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220 IRF1010EPBF
- Infineon HEXFET N-Channel MOSFET 200 V Enhancement TO-263 IRFS4620TRLPBF
- Infineon HEXFET N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263 IRFS7537TRLPBF
- Infineon HEXFET N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263 IRFS3806TRLPBF
- Infineon HEXFET N-Channel MOSFET 60 V Enhancement, 8-Pin TO-263 IRFS3006TRL7PP