Infineon HEXFET Type N-Channel MOSFET, 81 A, 20 V Enhancement, 2-Pin DirectFET IRF6636TRPBF

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HK$132.30

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  • 2026年9月11日 發貨
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20 - 90HK$12.99HK$129.90
100 - 240HK$12.76HK$127.60
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包裝方式:
RS庫存編號:
222-4739
製造零件編號:
IRF6636TRPBF
製造商:
Infineon
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品牌

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

81A

Maximum Drain Source Voltage Vds

20V

Series

HEXFET

Package Type

DirectFET

Mount Type

Surface

Pin Count

2

Maximum Drain Source Resistance Rds

6.4mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

18nC

Maximum Power Dissipation Pd

42W

Height

0.68mm

Standards/Approvals

No

Length

4.85mm

Automotive Standard

No

The Infineon design of HEXFET® Power MOSFET Silicon technology with the advanced Direct FETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.

100% Rg tested Low Conduction and Switching Losses

Ultra Low Package Inductance Ideal for CPU Core DC-DC Converters

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