Infineon HEXFET Type N-Channel MOSFET, 30 A, 80 V Enhancement, 4-Pin PQFN IRFH8311TRPBF
- RS庫存編號:
- 222-4747
- 製造零件編號:
- IRFH8311TRPBF
- 製造商:
- Infineon
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HK$104.70
訂單超過 HK$250.00 免費送貨
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- 1,425 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 15 - 15 | HK$6.98 | HK$104.70 |
| 30 - 75 | HK$6.86 | HK$102.90 |
| 90 - 225 | HK$6.72 | HK$100.80 |
| 240 - 465 | HK$6.613 | HK$99.20 |
| 480 + | HK$6.487 | HK$97.31 |
* 參考價格
- RS庫存編號:
- 222-4747
- 製造零件編號:
- IRFH8311TRPBF
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PQFN | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 2.1mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Maximum Power Dissipation Pd | 96W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Height | 1.17mm | |
| Length | 5mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PQFN | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 2.1mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Maximum Power Dissipation Pd 96W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Height 1.17mm | ||
Length 5mm | ||
Automotive Standard No | ||
The Infineon design of HEXFET® Power MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Low RDSon (<1.15 mΩ)
Low Thermal Resistance to PCB (<0.8°C/W)
100% Rg tested
Low Profile (<0.9 mm)
相关链接
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