Infineon IMZ1 N-Channel MOSFET, 26 A, 1.2 kV Enhancement, 4-Pin TO-247 IMZ120R090M1HXKSA1
- RS庫存編號:
- 222-4867
- 製造零件編號:
- IMZ120R090M1HXKSA1
- 製造商:
- Infineon
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HK$76.10
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單位 | 每單位 |
|---|---|
| 1 - 9 | HK$76.10 |
| 10 - 99 | HK$74.70 |
| 100 - 249 | HK$73.40 |
| 250 - 499 | HK$72.20 |
| 500 + | HK$70.70 |
* 參考價格
- RS庫存編號:
- 222-4867
- 製造零件編號:
- IMZ120R090M1HXKSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 26A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Package Type | TO-247 | |
| Series | IMZ1 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 90mΩ | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 26A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Package Type TO-247 | ||
Series IMZ1 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 90mΩ | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon CoolSiC 1200 V, 90 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages.
Best in class switching and conduction losses
Benchmark high threshold voltage, Vth > 4 V
0V turn-off gate voltage for easy and simple gate drive
Wide gate-source voltage range
Robust and low loss body diode rated for hard commutation
相关链接
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