製造零件編號

Infineon IMZ1 N-Channel MOSFET, 52 A, 1.2 kV Enhancement, 4-Pin TO-247 IMZ120R045M1XKSA1

RS庫存編號:: 222-4864
製造零件編號:: IMZ120R045M1XKSA1
製造商:: Infineon

Infineon IMZ1 N-Channel MOSFET, 52 A, 1.2 kV Enhancement, 4-Pin TO-247 IMZ120R045M1XKSA1

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小計（1 管，共 30 件）*

HK$3,142.71

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單位	每單位	每管*
30 - 60	HK$104.757	HK$3,142.71
90 - 120	HK$100.733	HK$3,021.99
150 +	HK$99.447	HK$2,983.41

* 參考價格

RS庫存編號:: 222-4864
製造零件編號:: IMZ120R045M1XKSA1
製造商:: Infineon

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產品詳細資訊

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選取全部	屬性	值
	品牌	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	52A
	Maximum Drain Source Voltage Vds	1.2kV
	Package Type	TO-247
	Series	IMZ1
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	45mΩ
	Channel Mode	Enhancement
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 52A
	Maximum Drain Source Voltage Vds 1.2kV
	Package Type TO-247
	Series IMZ1
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 45mΩ
	Channel Mode Enhancement
	Standards/Approvals No
	Automotive Standard No

Datasheet - IMZ120R045M1XKSA1

The Infineon CoolSiC™ 1200 V, 45 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages.

Best in class switching and conduction losses

Benchmark high threshold voltage, Vth > 4 V

0V turn-off gate voltage for easy and simple gate drive

Wide gate-source voltage range

Robust and low loss body diode rated for hard commutation

Infineon IMZ1 N-Channel MOSFET, 52 A, 1.2 kV Enhancement, 4-Pin TO-247 IMZ120R045M1XKSA1

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