Infineon IMZ1 N-Channel MOSFET, 52 A, 1.2 kV Enhancement, 4-Pin TO-247 IMZ120R045M1XKSA1

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小計(1 件)*

HK$142.60

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10 - 99HK$138.90
100 - 249HK$135.60
250 - 499HK$132.00
500 +HK$128.80

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包裝方式:
RS庫存編號:
222-4865
製造零件編號:
IMZ120R045M1XKSA1
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

52A

Maximum Drain Source Voltage Vds

1.2kV

Series

IMZ1

Package Type

TO-247

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

45mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon CoolSiC™ 1200 V, 45 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages.

Best in class switching and conduction losses

Benchmark high threshold voltage, Vth > 4 V

0V turn-off gate voltage for easy and simple gate drive

Wide gate-source voltage range

Robust and low loss body diode rated for hard commutation

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