製造零件編號

Infineon IPB65R N-Channel MOSFET, 18 A, 600 V Enhancement, 3-Pin TO-263 IPB60R180P7ATMA1

RS庫存編號:: 222-4895
製造零件編號:: IPB60R180P7ATMA1
製造商:: Infineon

Infineon IPB65R N-Channel MOSFET, 18 A, 600 V Enhancement, 3-Pin TO-263 IPB60R180P7ATMA1

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小計（1 包，共 5 件）*

HK$126.70

库存信息目前无法访问 - 请稍候查看

單位	每單位	每包*
5 - 5	HK$25.34	HK$126.70
10 - 95	HK$24.90	HK$124.50
100 - 245	HK$24.46	HK$122.30
250 - 495	HK$23.98	HK$119.90
500 +	HK$23.58	HK$117.90

* 參考價格

RS庫存編號:: 222-4895
製造零件編號:: IPB60R180P7ATMA1
製造商:: Infineon

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產品詳細資訊

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選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	18A
	Maximum Drain Source Voltage Vds	600V
	Series	IPB65R
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	180mΩ
	Channel Mode	Enhancement
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 18A
	Maximum Drain Source Voltage Vds 600V
	Series IPB65R
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 180mΩ
	Channel Mode Enhancement
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPB60R180P7ATMA1

The Infineon 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.

ESD ruggedness of ≥ 2kV (HBM class 2)

Integrated gate resistor R G

Rugged body diode

Wide portfolio in through hole and surface mount packages

Both standard grade and industrial grade parts are available

Infineon IPB65R N-Channel MOSFET, 18 A, 600 V Enhancement, 3-Pin TO-263 IPB60R180P7ATMA1

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