Infineon IPB65R Type N-Channel MOSFET, 18 A, 600 V Enhancement, 3-Pin TO-263 IPB60R180P7ATMA1

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小計(1 包,共 5 件)*

HK$121.80

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每單位
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5 - 5HK$24.36HK$121.80
10 - 95HK$23.94HK$119.70
100 - 245HK$23.52HK$117.60
250 - 495HK$23.06HK$115.30
500 +HK$22.66HK$113.30

* 參考價格

包裝方式:
RS庫存編號:
222-4895
製造零件編號:
IPB60R180P7ATMA1
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-263

Series

IPB65R

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

180mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.

ESD ruggedness of ≥ 2kV (HBM class 2)

Integrated gate resistor R G

Rugged body diode

Wide portfolio in through hole and surface mount packages

Both standard grade and industrial grade parts are available

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