Infineon IPD50R N-Channel MOSFET, 40 A, 600 V Enhancement, 5-Pin ThinPAK IPL60R060CFD7AUMA1
- RS庫存編號:
- 222-4907
- 製造零件編號:
- IPL60R060CFD7AUMA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 包，共 2 件）*
HK$117.00
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2027年6月15日 發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 8 | HK$58.50 | HK$117.00 |
| 10 - 98 | HK$57.40 | HK$114.80 |
| 100 - 248 | HK$56.40 | HK$112.80 |
| 250 - 498 | HK$55.35 | HK$110.70 |
| 500 + | HK$54.40 | HK$108.80 |
* 參考價格
- RS庫存編號:
- 222-4907
- 製造零件編號:
- IPL60R060CFD7AUMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IPD50R | |
| Package Type | ThinPAK | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 219W | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 79nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 8.1mm | |
| Height | 1.1mm | |
| Standards/Approvals | No | |
| Width | 8.1mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IPD50R | ||
Package Type ThinPAK | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 219W | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 79nC | ||
Maximum Operating Temperature 150°C | ||
Length 8.1mm | ||
Height 1.1mm | ||
Standards/Approvals No | ||
Width 8.1mm | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behaviour and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.
Best-in-class hard commutation ruggedness
Highest reliability for resonant topologies
Highest efficiency with outstanding ease-of-use/performance trade-off
Enabling increased power density solutions
相关链接
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