Infineon BSS138I N-Channel MOSFET, 230 mA, 60 V Depletion, 3-Pin SOT-23 BSS138IXTSA1
- RS庫存編號:
- 225-0561
- Distrelec 貨號:
- 304-39-401
- 製造零件編號:
- BSS138IXTSA1
- 製造商:
- Infineon
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HK$86.20
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單位 | 每單位 | 每包* | 節省 |
|---|---|---|---|
| 100 - 100 | HK$0.862 | HK$86.20 | - |
| 200 - 200 | HK$0.839 | HK$83.90 | HK$4.60 |
| 300 - 300 | HK$0.819 | HK$81.90 | HK$12.90 |
| 400 - 400 | HK$0.80 | HK$80.00 | HK$24.80 |
| 500 + | HK$0.779 | HK$77.90 | HK$41.50 |
* 參考價格
- RS庫存編號:
- 225-0561
- Distrelec 貨號:
- 304-39-401
- 製造零件編號:
- BSS138IXTSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 230mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | BSS138I | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6Ω | |
| Channel Mode | Depletion | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 0.36W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 1nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3.04mm | |
| Height | 1.12mm | |
| Width | 1.4mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 230mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series BSS138I | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6Ω | ||
Channel Mode Depletion | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 0.36W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 1nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3.04mm | ||
Height 1.12mm | ||
Width 1.4mm | ||
Automotive Standard No | ||
The Infineon BSS138I is the small signal, small power N- and P-channel MOSFETs provide a wide range of VGS(th) levels and RDS(on) values, as well as multiple voltage classes. This MOSFET have enhancement and depletion-mode options.
PCB-space and cost savings
Gate drive flexibility
Reduced design complexity
Environmentally friendly
High overall efficiency
相关链接
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