Vishay N-Channel 60 V Type N-Channel MOSFET, 602 A, 60 V, 4-Pin PowerPAK (8x8L) SQJQ160E-T1_GE3
- RS庫存編號:
- 225-9968
- 製造零件編號:
- SQJQ160E-T1_GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 包，共 5 件）*
HK$187.80
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 2,000 件從 2026年10月02日 起裝運發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 45 | HK$37.56 | HK$187.80 |
| 50 - 95 | HK$36.90 | HK$184.50 |
| 100 - 245 | HK$36.20 | HK$181.00 |
| 250 - 995 | HK$35.56 | HK$177.80 |
| 1000 + | HK$34.90 | HK$174.50 |
* 參考價格
- RS庫存編號:
- 225-9968
- 製造零件編號:
- SQJQ160E-T1_GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 602A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK (8x8L) | |
| Series | N-Channel 60 V | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 1.8mΩ | |
| Maximum Power Dissipation Pd | 600W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 183nC | |
| Forward Voltage Vf | 0.7V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 8.1mm | |
| Height | 1.7mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 602A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK (8x8L) | ||
Series N-Channel 60 V | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 1.8mΩ | ||
Maximum Power Dissipation Pd 600W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 183nC | ||
Forward Voltage Vf 0.7V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 8.1mm | ||
Height 1.7mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay Siliconix maintains Reliability data for Semiconductor Technology and Package Reliability represent a composite of all qualified locations.
AEC-Q101 qualified
100 % Rg and UIS tested
Thin 1.6 mm package
Very low thermal resistance
相关链接
- Vishay N-Channel 60 V Type N-Channel MOSFET 60 V, 4-Pin PowerPAK (8x8L) SQJQ160E-T1_GE3
- Vishay N-Channel 60 V Type N-Channel MOSFET 60 V, 4-Pin PowerPAK (8x8L) SQJ174EP-T1_GE3
- Vishay N-Channel 60 V Type N-Channel MOSFET 60 V, 4-Pin PowerPAK (8x8L) SQJA16EP-T1_GE3
- Vishay N-Channel 60 V Type N-Channel MOSFET 60 V Single, 4-Pin PowerPAK (8x8L) SQJ164ELP-T1_GE3
- Vishay N-Channel 40 V Type N-Channel MOSFET 40 V, 4-Pin PowerPAK (8x8L) SQJ138ELP-T1_GE3
- Vishay N-Channel 30 V Type N-Channel MOSFET 30 V, 4-Pin PowerPAK (8x8L) SQJ128ELP-T1_GE3
- Vishay N-Channel 80 V Type N-Channel MOSFET 80 V, 4-Pin PowerPAK (8x8L) SQJ180EP-T1_GE3
- Vishay TrenchFET N channel-Channel MOSFET 100 V Enhancement, 4-Pin PowerPAK (8x8L) SQJQ118E-T1_GE3