Dual N-Channel MOSFET, 335 A, 25 V, 8-Pin PowerPAK SO-8 Vishay SIRA20BDP-T1-GE3

RS庫存編號:: 228-2915
製造零件編號:: SIRA20BDP-T1-GE3
製造商:: Vishay

Dual N-Channel MOSFET, 335 A, 25 V, 8-Pin PowerPAK SO-8 Vishay SIRA20BDP-T1-GE3

2980 現貨庫存，可於3工作日發貨。

單價个（每带 3000 ）

HK$5.697

單位	每單位	每卷*
3000 - 12000	HK$5.697	HK$17,091.00
15000 +	HK$5.583	HK$16,749.00

* 參考價格

RS庫存編號:: 228-2915
製造零件編號:: SIRA20BDP-T1-GE3
製造商:: Vishay

Datasheet - SIRA20BDP-T1-GE3

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	335 A
Maximum Drain Source Voltage	25 V
Package Type	PowerPAK SO-8
Series	TrenchFET
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	0.00058 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.1V
Number of Elements per Chip	2
Transistor Material	Si